tm march 2008 FDP047N08 n-channel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDP047N08 rev. a www.fairchildsemi.com 1 FDP047N08 n-channel powertrench ? mosfet 75v, 164a, 4.7m ? features ?r ds(on) = 3.8m ? ( typ.)@ v gs = 10v, i d = 80a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is pr oduced using fairchild semicon- ductor?s advanced powertrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc convertors / synchronous rectification d g s mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter ratings units v dss drain to source voltage 75 v v gss gate to source voltage 20 v i d d r a i n c u r r e n t -continuous (t c = 25 o c) 164* a -continuous (t c = 100 o c) 116* a i dm d r a i n c u r r e n t - p u l s e d (note 1) 656 a e as single pulsed avalanche energy (note 2) 670 mj dv/dt peak diode recovery dv/dt (note 3) 3.0 v/ns p d power dissipation (t c = 25 o c) 268 w - derate above 25 o c1.79w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.56 o c/w r cs thermal resistance, case to sink typ. 0.5 r ja thermal resistance, junction to ambient 62.5 to-220 fdp series g s d * calculated continuous current based on maximum allowable junction temperature. package limitation current is 80a. www.datasheet.in
FDP047N08 n-channel powertrench ? mosfet FDP047N08 rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDP047N08 FDP047N08 to-220 - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c75 - - v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.02 - v/ o c i dss zero gate voltage drain current v ds = 75v, v gs = 0v - - 1 a v ds = 75v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.53.54.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 80a - 3.7 4.7 m ? g fs forward transconductance v ds = 10v, i d = 80a (note 4) - 150 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 7080 9415 pf c oss output capacitance - 870 1155 pf c rss reverse transfer capacitance - 410 615 pf t d(on) turn-on delay time v dd = 37.5v, i d = 80a r gen = 25 ?, v gs = 10v (note 4, 5) - 100 210 ns t r turn-on rise time - 147 304 ns t d(off) turn-off delay time - 220 450 ns t f turn-off fall time - 114 238 ns q g(tot) total gate charge at 10v v ds = 60v, i d = 80a v gs = 10v (note 4, 5) - 117 152 nc q gs gate to source gate charge - 37 - nc q gd gate to drain ?miller? charge - 32 - nc i s maximum continuous drain to source diode forward current - - 164 a i sm maximum pulsed drain to source diode forward current - - 656 a v sd drain to source diode forward voltage v gs = 0v, i sd = 80a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 80a di f /dt = 100a/ s (note 4) -45-ns q rr reverse recovery charge - 66 - nc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 0.21mh, i as = 80a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 75a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics www.datasheet.in
FDP047N08 n-channel powertrench ? mosfet FDP047N08 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.002 0.01 0.1 1 1 10 100 500 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0v 10.0v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 34567 1 10 100 500 -55 o c 175 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 0 100 200 300 400 0.002 0.003 0.004 0.005 0.006 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 500 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 30 0 4000 8000 12000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 20406080100120 0 2 4 6 8 10 *note: i d = 80a v ds = 15v v ds = 37.5v v ds = 60v v gs , gate-source voltage [v] q g , total gate charge [nc] www.datasheet.in
FDP047N08 n-channel powertrench ? mosfet FDP047N08 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. vs. temperature temperature figure 9. maximum safe operating area figure 10. maximum drain current v s . c a s e t e m p e r a t u r e figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 1.15 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 80a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 30 60 90 120 150 180 i d , drain current [a] t c , case temperature [ o c ] limited by package 110100 0.1 1 10 100 1000 30 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 10 -5 10 -4 10 -3 10 -2 10 -1 110 1e-3 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.56 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2 www.datasheet.in
FDP047N08 n-channel powertrench ? mosfet FDP047N08 rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms www.datasheet.in
FDP047N08 n-channel powertrench ? mosfet FDP047N08 rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- www.datasheet.in
FDP047N08 n-channel powertrench ? mosfet FDP047N08 rev. a www.fairchildsemi.com 7 mechanical dimensions to-220 www.datasheet.in
FDP047N08 n-channel powertrench ? mosfet FDP047N08 rev. a www.fairchildsemi.com 8 rev. i33 trademarks the following includes registered and unregi stered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidianries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporati on, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make chang es without notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically th e warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component in any component of a life support, device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? ultra frfet? unifet? vcx? tm ? tm tm datasheet identification product status definition advance information formative or in design this datasheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminar y data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains fi nal specifications. fairch ild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontin- ued by fairchild semiconductor. the data sheet is printed for reference infor- mation only. www.datasheet.in
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